Adjusting parameters of channel drivers based on temperature

ABSTRACT

Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.

BACKGROUND

The following relates generally to one or more memory systems and morespecifically to adjusting parameters of data channel drivers based ontemperature.

Memory devices are widely used to store information in variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Information is stored byprogramming memory cells within a memory device to various states. Forexample, binary memory cells may be programmed to one of two supportedstates, often denoted by a logic 1 or a logic 0. In some examples, asingle memory cell may support more than two states, any one of whichmay be stored. To access the stored information, a component of thedevice may read, or sense, at least one stored state in the memorydevice. To store information, a component of the device may write, orprogram, the state in the memory device.

Various types of memory devices exist, including magnetic hard disks,random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM),synchronous dynamic RAM (SDRAM), ferroelectric RAM (FeRAM), magnetic RAM(MRAM), resistive RAM (RRAM), flash memory, phase change memory (PCM),and others. Memory devices may be volatile or non-volatile. Non-volatilememory, e.g., FeRAM, may maintain their stored logic state for extendedperiods of time even in the absence of an external power source.Volatile memory devices, e.g., DRAM, may lose their stored state whendisconnected from an external power source. FeRAM may be able to achievedensities similar to volatile memory but may have non-volatileproperties due to the use of a ferroelectric capacitor as a storagedevice.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example of a system that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein.

FIG. 2 illustrates an example of a memory die that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein.

FIG. 3 illustrates an example of a system that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein.

FIG. 4 shows a flowchart illustrating a method that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein.

FIG. 5 shows a block diagram of a memory device that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein.

FIGS. 6 and 7 show flowcharts illustrating methods that supportadjusting parameters of channel drivers based on temperature inaccordance with examples as disclosed herein.

DETAILED DESCRIPTION

Impedance mismatches on traces connecting a memory controller to memoryoutputs may result in reflections and ringing on the signals. Reducingor minimizing these impedance mismatches in a signal path may helpperformance of a circuit, such as a memory device, by reducing thereflections and ringing. To help reduce these impedance discontinuities,a calibration scheme may be used. Some memory systems may use acalibration component to adjust an impedance associated with a driver ofa channel based on temperature. In some cases, a portion of a memorysystem may not be able to use the calibration component in somescenarios.

Systems, devices, and techniques are described to adjust the impedanceassociated with a driver of a channel based at least in part on atemperature of a memory device when a calibration component isunavailable. The memory device may determine whether a calibrationcomponent is available for use by the memory device. If not, the memorydevice may select an impedance setting for the driver that is based onan operating temperature of the memory device.

Features of the disclosure are initially described in the context ofmemory systems and dies as described with reference to FIGS. 1-2.Features of the disclosure are described in the context of a system anda flowchart that relate to adjusting parameters of channel drivers basedon temperature as described with reference to FIGS. 3-4. These and otherfeatures of the disclosure are further illustrated by and described withreference to an apparatus diagram and flowcharts that relate toadjusting parameters of channel drivers based on temperature asdescribed with reference to FIGS. 5-7.

FIG. 1 illustrates an example of a system 100 that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein. The system 100 may include a host device105, a memory device 110, and a plurality of channels 115 coupling thehost device 105 with the memory device 110. The system 100 may includeone or more memory devices 110, but aspects of the one or more memorydevices 110 may be described in the context of a single memory device(e.g., memory device 110).

The system 100 may include portions of an electronic device, such as acomputing device, a mobile computing device, a wireless device, agraphics processing device, a vehicle, or other systems. For example,the system 100 may illustrate aspects of a computer, a laptop computer,a tablet computer, a smartphone, a cellular phone, a wearable device, aninternet-connected device, a vehicle controller, or the like. The memorydevice 110 may be a component of the system operable to store data forone or more other components of the system 100.

At least portions of the system 100 may be examples of the host device105. The host device 105 may be an example of a processor or othercircuitry within a device that uses memory to execute processes, such aswithin a computing device, a mobile computing device, a wireless device,a graphics processing device, a computer, a laptop computer, a tabletcomputer, a smartphone, a cellular phone, a wearable device, aninternet-connected device, a vehicle controller, or some otherstationary or portable electronic device, among other examples. In someexamples, the host device 105 may refer to the hardware, firmware,software, or a combination thereof that implements the functions of anexternal memory controller 120. In some examples, the external memorycontroller 120 may be referred to as a host or a host device 105.

A memory device 110 may be an independent device or a component that isoperable to provide physical memory addresses/space that may be used orreferenced by the system 100. In some examples, a memory device 110 maybe configurable to work with one or more different types of hostdevices. Signaling between the host device 105 and the memory device 110may be operable to support one or more of: modulation schemes tomodulate the signals, various pin configurations for communicating thesignals, various form factors for physical packaging of the host device105 and the memory device 110, clock signaling and synchronizationbetween the host device 105 and the memory device 110, timingconventions, or other factors.

The memory device 110 may be operable to store data for the componentsof the host device 105. In some examples, the memory device 110 may actas a slave-type device to the host device 105 (e.g., responding to andexecuting commands provided by the host device 105 through the externalmemory controller 120). Such commands may include one or more of a writecommand for a write operation, a read command for a read operation, arefresh command for a refresh operation, or other commands.

The host device 105 may include one or more of an external memorycontroller 120, a processor 125, a basic input/output system (BIOS)component 130, or other components such as one or more peripheralcomponents or one or more input/output controllers. The components ofhost device may be in coupled with one another using a bus 135.

The processor 125 may be operable to provide control or otherfunctionality for at least portions of the system 100 or at leastportions of the host device 105. The processor 125 may be ageneral-purpose processor, a digital signal processor (DSP), anapplication-specific integrated circuit (ASIC), a field-programmablegate array (FPGA) or other programmable logic device, discrete gate ortransistor logic, discrete hardware components, or a combination ofthese components. In such examples, the processor 125 may be an exampleof a central processing unit (CPU), a graphics processing unit (GPU), ageneral purpose GPU (GPGPU), or a system on a chip (SoC), among otherexamples. In some examples, the external memory controller 120 may beimplemented by or be a part of the processor 125.

The BIOS component 130 may be a software component that includes a BIOSoperated as firmware, which may initialize and run various hardwarecomponents of the system 100 or the host device 105. The BIOS component130 may also manage data flow between the processor 125 and the variouscomponents of the system 100 or the host device 105. The BIOS component130 may include a program or software stored in one or more of read-onlymemory (ROM), flash memory, or other non-volatile memory.

The memory device 110 may include a device memory controller 155 and oneor more memory dies 160 (e.g., memory chips) to support a desiredcapacity or a specified capacity for data storage. Each memory die 160may include a local memory controller 165 (e.g., local memory controller165-a, local memory controller 165-b, local memory controller 165-N) anda memory array 170 (e.g., memory array 170-a, memory array 170-b, memoryarray 170-N). A memory array 170 may be a collection (e.g., one or moregrids, one or more banks, one or more tiles, one or more sections) ofmemory cells, with each memory cell being operable to store at least onebit of data. A memory device 110 including two or more memory dies maybe referred to as a multi-die memory or a multi-die package or amulti-chip memory or a multi-chip package.

The device memory controller 155 may include circuits, logic, orcomponents operable to control operation of the memory device 110. Thedevice memory controller 155 may include the hardware, the firmware, orthe instructions that enable the memory device 110 to perform variousoperations and may be operable to receive, transmit, or executecommands, data, or control information related to the components of thememory device 110. The device memory controller 155 may be operable tocommunicate with one or more of the external memory controller 120, theone or more memory dies 160, or the processor 125. In some examples, thedevice memory controller 155 may control operation of the memory device110 described herein in conjunction with the local memory controller 165of the memory die 160.

In some examples, the memory device 110 may receive data or commands orboth from the host device 105. For example, the memory device 110 mayreceive a write command indicating that the memory device 110 is tostore data for the host device 105 or a read command indicating that thememory device 110 is to provide data stored in a memory die 160 to thehost device 105.

A local memory controller 165 (e.g., local to a memory die 160) may beoperable to control operation of the memory die 160. In some examples, alocal memory controller 165 may be operable to communicate (e.g.,receive or transmit data or commands or both) with the device memorycontroller 155. In some examples, a memory device 110 may not include adevice memory controller 155, and a local memory controller 165, or theexternal memory controller 120 may perform various functions describedherein. As such, a local memory controller 165 may be operable tocommunicate with the device memory controller 155, with other localmemory controllers 165, or directly with the external memory controller120, or the processor 125, or a combination thereof. Examples ofcomponents that may be included in the device memory controller 155 orthe local memory controllers 165 or both may include receivers forreceiving signals (e.g., from the external memory controller 120),transmitters for transmitting signals (e.g., to the external memorycontroller 120), decoders for decoding or demodulating received signals,encoders for encoding or modulating signals to be transmitted, orvarious other circuits or controllers operable for supporting describedoperations of the device memory controller 155 or local memorycontroller 165 or both.

The device memory controller 155 or the local memory controllers or bothmay also include driver calibrators for adjusting parameters of channeldrivers. For example, the device memory controller 155 or the localmemory controllers or both may include driver calibrators for adjustingan impedance associated with a driver of a channel based on temperaturein accordance with examples as disclosed herein.

The external memory controller 120 may be operable to enablecommunication of one or more of information, data, or commands betweencomponents of the system 100 or the host device 105 (e.g., the processor125) and the memory device 110. The external memory controller 120 mayconvert or translate communications exchanged between the components ofthe host device 105 and the memory device 110. In some examples, theexternal memory controller 120 or other component of the system 100 orthe host device 105, or its functions described herein, may beimplemented by the processor 125. For example, the external memorycontroller 120 may be hardware, firmware, or software, or somecombination thereof implemented by the processor 125 or other componentof the system 100 or the host device 105. Although the external memorycontroller 120 is depicted as being external to the memory device 110,in some examples, the external memory controller 120, or its functionsdescribed herein, may be implemented by one or more components of amemory device 110 (e.g., a device memory controller 155, a local memorycontroller 165) or vice versa.

The components of the host device 105 may exchange information with thememory device 110 using one or more channels 115. The channels 115 maybe operable to support communications between the external memorycontroller 120 and the memory device 110. Each channel 115 may beexamples of transmission mediums that carry information between the hostdevice 105 and the memory device. Each channel 115 may include one ormore signal paths or transmission mediums (e.g., conductors) betweenterminals associated with the components of system 100. A signal pathmay be an example of a conductive path operable to carry a signal. Forexample, a channel 115 may include a first terminal including one ormore pins or pads at the host device 105 and one or more pins or pads atthe memory device 110. A pin may be an example of a conductive input oroutput point of a device of the system 100, and a pin may be operable toact as part of a channel.

Channels 115 (and associated signal paths and terminals) may bededicated to communicating one or more types of information. Forexample, the channels 115 may include one or more command and address(CA) channels 186, one or more clock signal (CK) channels 188, one ormore data (DQ) channels 190, one or more other channels 192, or acombination thereof. In some examples, signaling may be communicatedover the channels 115 using single data rate (SDR) signaling or doubledata rate (DDR) signaling. In SDR signaling, one modulation symbol(e.g., signal level) of a signal may be registered for each clock cycle(e.g., on a rising or falling edge of a clock signal). In DDR signaling,two modulation symbols (e.g., signal levels) of a signal may beregistered for each clock cycle (e.g., on both a rising edge and afalling edge of a clock signal).

FIG. 2 illustrates an example of a memory die 200 that supportsadjusting parameters of channel drivers based on temperature inaccordance with examples as disclosed herein. The memory die 200 may bean example of the memory dies 160 described with reference to FIG. 1. Insome examples, the memory die 200 may be referred to as a memory chip, amemory device, or an electronic memory apparatus. The memory die 200 mayinclude one or more memory cells 205 that may each be programmable tostore different logic states (e.g., programmed to one of a set of two ormore possible states). For example, a memory cell 205 may be operable tostore one bit of information at a time (e.g., a logic 0 or a logic 1).In some examples, a memory cell 205 (e.g., a multi-level memory cell)may be operable to store more than one bit of information at a time(e.g., a logic 00, logic 01, logic 10, a logic 11). In some examples,the memory cells 205 may be arranged in an array, such as a memory array170 described with reference to FIG. 1.

A memory cell 205 may store a state (e.g., polarization state ordielectric charge) representative of the programmable states in acapacitor. In FeRAM architectures, the memory cell 205 may include acapacitor 240 that includes a ferroelectric material to store a chargeand/or a polarization representative of the programmable state. Thememory cell 205 may include a logic storage component, such as capacitor240, and a switching component 245. The capacitor 240 may be an exampleof a ferroelectric capacitor. A first node of the capacitor 240 may becoupled with the switching component 245 and a second node of thecapacitor 240 may be coupled with a plate line 220. The switchingcomponent 245 may be an example of a transistor or any other type ofswitch device that selectively establishes or de-establishes electroniccommunication between two components.

The memory die 200 may include access lines (e.g., the word lines 210,the digit lines 215, and the plate lines 220) arranged in a pattern,such as a grid-like pattern. An access line may be a conductive linecoupled with a memory cell 205 and may be used to perform accessoperations on the memory cell 205. In some examples, word lines 210 maybe referred to as row lines. In some examples, digit lines 215 may bereferred to as column lines or bit lines. References to access lines,row lines, column lines, word lines, digit lines, bit lines, or platelines, or their analogues, are interchangeable without loss ofunderstanding or operation. Memory cells 205 may be positioned atintersections of the word lines 210, the digit lines 215, and/or theplate lines 220.

Operations such as reading and writing may be performed on memory cells205 by activating or selecting access lines such as a word line 210, adigit line 215, and/or a plate line 220. By biasing a word line 210, adigit line 215, and a plate line 220 (e.g., applying a voltage to theword line 210, digit line 215, or plate line 220), a single memory cell205 may be accessed at their intersection. Activating or selecting aword line 210, a digit line 215, or a plate line 220 may includeapplying a voltage to the respective line.

Accessing the memory cells 205 may be controlled through a row decoder225, a column decoder 230, and a plate driver 235. For example, a rowdecoder 225 may receive a row address from the local memory controller265 and activate a word line 210 based on the received row address. Acolumn decoder 230 receives a column address from the local memorycontroller 265 and activates a digit line 215 based on the receivedcolumn address. A plate driver 235 may receive a plate address from thelocal memory controller 265 and activates a plate line 220 based on thereceived plate address.

Selecting or deselecting the memory cell 205 may be accomplished byactivating or deactivating the switching component 245. The capacitor240 may be in electronic communication with the digit line 215 using theswitching component 245. For example, the capacitor 240 may be isolatedfrom digit line 215 when the switching component 245 is deactivated, andthe capacitor 240 may be coupled with digit line 215 when the switchingcomponent 245 is activated.

The sense component 250 may determine a state (e.g., a polarizationstate or a charge) stored on the capacitor 240 of the memory cell 205and determine a logic state of the memory cell 205 based on the detectedstate. The sense component 250 may include one or more sense amplifiersto amplify the signal output of the memory cell 205. The sense component250 may compare the signal received from the memory cell 205 across thedigit line 215 to a reference 255 (e.g., a reference voltage). Thedetected logic state of the memory cell 205 may be provided as an outputof the sense component 250 (e.g., to an input/output 260), and mayindicate the detected logic state to another component of a memorydevice 110 that includes the memory die 200.

The local memory controller 265 may control the operation of memorycells 205 through the various components (e.g., row decoder 225, columndecoder 230, plate driver 235, and sense component 250). The localmemory controller 265 may be an example of the local memory controller165 described with reference to FIG. 1. In some examples, one or more ofthe row decoder 225, column decoder 230, and plate driver 235, and sensecomponent 250 may be co-located with the local memory controller 265.The local memory controller 265 may be operable to receive one or moreof commands or data from one or more different memory controllers (e.g.,an external memory controller 120 associated with a host device 105,another controller associated with the memory die 200), translate thecommands or the data (or both) into information that can be used by thememory die 200, perform one or more operations on the memory die 200,and communicate data from the memory die 200 to a host device 105 basedon performing the one or more operations. The local memory controller265 may generate row signals and column address signals to activate thetarget word line 210, the target digit line 215, and the target plateline 220. The local memory controller 265 may also generate and controlvarious voltages or currents used during the operation of the memory die200. In general, the amplitude, the shape, or the duration of an appliedvoltage or current discussed herein may be varied and may be differentfor the various operations discussed in operating the memory die 200.

The local memory controller 265 may be operable to perform one or moreaccess operations on one or more memory cells 205 of the memory die 200.Examples of access operations may include a write operation, a readoperation, a refresh operation, a precharge operation, or an activateoperation, among others. In some examples, access operations may beperformed by or otherwise coordinated by the local memory controller 265in response to various access commands (e.g., from a host device 105).The local memory controller 265 may be operable to perform other accessoperations not listed here or other operations related to the operatingof the memory die 200 that are not directly related to accessing thememory cells 205. The local memory controller 265 may include a drivercalibrator 270 that adjusts parameters of data channel drivers based ontemperature in accordance with examples as disclosed herein. Forexample, the driver calibrator 270 may adjust an impedance associatedwith a driver of a channel based on temperature to minimize impedancemismatches.

The local memory controller 265 may be operable to perform a writeoperation (e.g., a programming operation) on one or more memory cells205 of the memory die 200. During a write operation, a memory cell 205of the memory die 200 may be programmed to store a desired logic state.The local memory controller 265 may identify a target memory cell 205 onwhich to perform the write operation. The local memory controller 265may identify a target word line 210, a target digit line 215, and atarget plate line 220 coupled with the target memory cell 205. The localmemory controller 265 may activate the target word line 210, the targetdigit line 215, and the target plate line 220 (e.g., applying a voltageto the word line 210, digit line 215, or plate line 220) to access thetarget memory cell 205. The local memory controller 265 may apply aspecific signal (e.g., write pulse) to the digit line 215 during thewrite operation to store a specific state (e.g., charge) in thecapacitor 240 of the memory cell 205. The pulse used as part of thewrite operation may include one or more voltage levels over a duration.

While the features of the present disclosure are described withreference to ferroelectric memory technology, such as ferroelectric RAM(FeRAM), these features may be implemented in other memory technologies.For example, the features of the present disclosure may be used withdynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), magnetic RAM(MRAM), resistive RAM (RRAM), flash memory, phase change memory (PCM),others, or any combination thereof.

FIG. 3 illustrates an example of a system 300 that supports adjustingparameters of channel drivers based on temperature in accordance withexamples as disclosed herein. The system 300 may be an example of adriver calibrator 270 described with reference to FIG. 2. Reducing orminimizing impedance mismatch on traces connecting a memory controllerto memory outputs may help reduce reflections and ringing on thesignals. To help reduce these impedance discontinuities, a calibrationscheme may be used. Some memory systems may use a calibration componentto adjust an impedance associated with a driver of a channel based ontemperature. In some cases, a portion of a memory system may not be ableto use the calibration component.

The system 300 may adjust the impedance associated with a driver of achannel based at least in part on a temperature of a memory device whena calibration component is unavailable. The system 300 may determinewhether a calibration component is available for use by the memorydevice. If not, the system 300 may select an impedance setting for thedriver that is based on an operating temperature of the memory device.The system 300 may include a calibration component 305, a selectioncomponent 310, a temperature component 315, and a driver 320.

The calibration component 305 may determine a desired value for aparameter of the driver 320. The calibration component 305 may send anindication to the driver 320, via the selection component 310, of thedesired value to use for the parameter. In one example, the indicationis a single number. In one example, the indication is a code. Otherindications are also possible. In some examples, the parameter may be animpedance associated with a driver 320 of a channel 325, e.g., a datachannel or a command and address channel. The calibration component 305may determine a desired value for the impedance based on voltagematching. In some examples, the calibration component 305 may determinea resistance that the driver 320 may use to reduce reflections andringing when driving the channel 325. In some cases, the calibrationcomponent 305 may be an example of a ZQ calibration component.

The calibration component 305 may include an input 330 coupled with oneend of a resistor 335, e.g., a (±1%) 240Ω resistor 335. The resistor 335may be used to calibrate the internal resistance for the channel 325.The resistor 335 may be installed outside or inside the memory device110. The other end of the resistor 335 may be coupled with a systemvoltage Vs. The voltage Vs may be a high voltage Vh, such as Vpp, or alow voltage VL, such as Vss or ground. The resistor 335 and anadjustment component 399 may both form a voltage divider and cause avoltage V1 to appear at the input 330. The adjustment component 399 mayinclude an internal set of transistors and resistors within calibrationcomponent 305. In some cases, the calibration component 305 may use adriver (e.g., similar to the driver 320) for the internal set oftransistors and resistors. There may be a desired voltage level forvoltage V1. The resistance of the resistor 335 and the internal set oftransistors and resistors of adjustment component 399 may vary based ontemperature, which may cause the voltage V1 to vary. To bring thevoltage V1 to the desired level, the calibration component 305 may addor remove additional transistors and resistors to adjust the resistancebetween the input line 330 and the voltage VSS or ground until thevoltage V1 matches the desired voltage level. The calibration component305 may send an indication of the determined resistance value to theselection component 310, which may pass it on to the driver 320 for thedriver 320 to use for the parameter value. In one example, theindication is a single number. In one example, the indication is a code.Other indications are also possible.

There may be times when the calibration component 305 may not beavailable to calibrate the driver 320. For example, in some examples,the resistor 335 may not be installed on the memory device 110, makingcalibration unavailable. In some examples, the resistor 335 may beshared across multiple drivers 320. In those cases, when the resistor335 is being used to calibrate one of the drivers 320, the resistor 335may not be available for calibration of one or more of the other drivers320. In some examples, the calibration component 305 may be halted. Forexample, some mobile systems may employ a low-power mode in which thecalibration component 305 is shut down to preserve power. In thosecases, the calibration component 305 may not be available to calibratethe driver 320. There may be other times when the calibration component305 may not be available.

The temperature component 315 may determine at least one temperature ofthe memory device 110 and output an indication thereof to the selectioncomponent 310. The temperature component 315 may include a temperaturesensor. In some examples, the temperature indication may be a singlevalue, such as what may be output by a thermistor. In some examples, thetemperature indication may be a code that may be decoded by theselection component 310. Other temperature indications may also bepossible. The temperature component 315 may reside on the memory device110.

The selection component 310 may determine which of a quantity of valuesmay be used to calibrate a parameter of the driver 320, based ontemperature and whether the calibration component 305 is available. Theselection component 310 may be coupled with the calibration component305, the temperature component 315, and the driver 320. The selectioncomponent 310 may receive from the calibration component 305 anindication of the desired value to use for the driver parameter 340. Theselection component 310 may receive from the temperature component 315an indication of the temperature 345. The selection component 310 mayalso receive an availability indication 350 of whether the calibrationcomponent 305 is available for calibrating the driver 320. Based atleast in part on these inputs, the selection component 310 may send tothe driver 320 an indication of the parameter value to use 355.

If the availability indication reflects that the calibration component305 is available, the selection component 310 may obtain the indicationof the parameter value determined by the calibration component 305. Theselection component 310 may then pass this information on to the driver320. In some examples, the selection component 310 may couple thecalibration component 305 with the driver 320 so the calibrationcomponent 305 may send the indication of the parameter value to thedriver 320 directly. In some examples, the calibration component 305 maysend an indication of the amount of resistance the driver 320 may use asdetermined by the calibration component 305.

The selection component 310 may receive the indication of thetemperature of the memory device from the temperature component 315. Insome examples, the temperature indication may be a single value. In someexamples, the temperature indication may be a code. Other indicationsmay also be possible.

If the availability indication reflects that the calibration component305 is not available, the selection component 310 may, based on thetemperature indication, select from a plurality of parameter values touse for the parameter of the driver 320. The parameter values may bestored by a memory component of the memory device. In some examples,each parameter value may correspond to a different temperature. In someexamples, each parameter value may correspond to a different range oftemperatures. In some examples, the selection component 310 may identifythe temperature to be within a range of temperatures, and the parametervalue may be selected based on the range of temperatures. In someexamples, the selection component 310 may identify first and secondparameter values corresponding to a low endpoint and a high endpoint ofthe range of temperatures, and the parameter value may be selected byperforming an interpolation procedure based on the temperature, therange of temperatures, and the first and second parameter values. Insome examples, the selection component 310 may identify the parametervalue from a quantity (e.g., a finite number) of values, such as, e.g.,four, eight, sixteen, or other quantities of parameter values.

In some examples, the plurality of parameter values may be examples ofone or more trim settings. In some examples, the selection component 310may select a trim setting from a plurality of trim settings based on thetemperature of the memory device. In some examples, each trim settingmay correspond to a different temperature. In some examples, each trimsetting may correspond to a different range of temperatures. The trimsettings may be determined for the memory device beforehand (e.g., atthe time of designing or at the time of manufacturing) by testing thememory device at different temperatures. The trim setting for eachtemperature may be stored by a memory component of the memory device.

The selection component 310 may include a first multiplexer 360 that mayinclude a plurality of inputs 365 and an output 370. The firstmultiplexer may be configured to select one of the inputs 365 to couplewith the output 370 based on the temperature. Each input 365 may receivea different value of the parameter corresponding to a differenttemperature or temperature range. In some examples, the inputs 365 maybe coupled with a plurality of conductive lines 375 that each correspondto a different value of the parameter. In some examples, each conductiveline 375 may correspond to a different trim setting 380. The firstmultiplexer 360 may receive the temperature indication 345 from thetemperature component 315 and based thereon, may select which input 365to couple with the output 370.

The selection component 310 may include a second multiplexer 385 thatmay include a plurality of inputs 390 and an output 395. The output 395may be coupled with the driver 320. The second multiplexer 385 may beconfigured to select one of the inputs 390 to couple with the output395. In some examples, the second multiplexer 385 may include a firstinput 390-a coupled with the output 370 of the first multiplexer 360 anda second input 390-b coupled with the calibration component 305 toreceive the driver parameter value 340 determined thereat.

The second multiplexer 385 may receive the availability indication 350to determine which input 390 to couple with the output 395. If theavailability indication 350 reflects that the calibration component 305is available, the second multiplexer 385 may couple the second input390-b with the output 395. This may couple the calibration component 305with the driver 320. The calibration component 305 may then send theindication of the parameter value to the driver 320 through the secondmultiplexer 385. In some cases, the calibration component 305 may sendan indication of the amount of resistance that the driver 320 may use asdetermined by the calibration component 305.

If the availability indication 350 reflects that the calibrationcomponent 305 is not available, the second multiplexer may couple thefirst input 390-a to the output. This may couple the selected parametervalue output by the first multiplexer 360 with the driver 320. In someexamples, this may couple a conductive line 375 corresponding to theselected trim setting 380 with the driver 320.

The driver 320 may be used to drive loads on a channel 325. The driver320 may also act as on-die termination (ODT) to cure impedancemismatches at the end of transmission lines, e.g., lines of a datachannel or a command and address channel. The driver 320 may receive theparameter value indication 355 from the selection component 310 andconfigure the driver's parameter based thereon. Depending on theavailability indication, the parameter value indication may originatefrom the calibration component 305 or the first multiplexer 360. Iforiginating from the first multiplexer 360, the parameter valueindication may be dependent on the temperature. In some examples, theparameter may be an impedance of the driver 320 and the parameter valueindication may represent a value to use for the parameter to minimize animpedance mismatch with the channel 325.

The driver 320 may include an adjustment component 398 that mayconfigure the parameter of the driver 320 based on the parameter valueindication received from the selection component 310. The adjustmentcomponent 398 may decode or otherwise determine the desired parametervalue based on the parameter value indication. The adjustment component398 may then configure the driver 320 based on the desired parametervalue. In some examples, the parameter may be an impedance of the driver320 and the adjustment component may include a set of transistors andresistors. The resistance of the transistors and resistors of adjustmentcomponent 398 may vary based on temperature. The adjustment component398 may be positioned within the driver 320, as depicted. Alternatively,the adjustment component 398 may be positioned outside the driver 320.

The channel 325 may be any channel 325 on the memory device. In someexamples, the channel 325 may be a data channel. In some examples thechannel 325 may be a command and address channel. After the parameterhas been configured using the selected parameter value, the driver 320may transmit a signal over the channel 325 using the parameter. In someexamples, the selected parameter value may minimize an impedancemismatch on the channel 325 that may help reduce reflections and ringingon the signals based on temperature.

The memory device may be a memory die and one or more of the systemcomponents may reside on or in the memory die. For example, one or moreof the calibration component 305, the selection component 310, thetemperature component 315, or the driver 320 may reside on or in thememory die.

FIG. 4 shows a flowchart illustrating a method 400 that supportsadjusting parameters of channel drivers based on temperature inaccordance with examples as disclosed herein. The operations of method400 may be implemented by a memory device or its components as describedherein. In some examples, a memory device may execute a set ofinstructions to control the functional elements of the memory device toperform the described functions. Additionally or alternatively, a memorydevice may perform aspects of the described functions usingspecial-purpose hardware.

At 405, the memory device may determine whether a calibration componentis available to adjust a parameter of a driver of a memory device. Acalibration component may not be available for various reasons,including, e.g., a resistor not being installed, the resistor being usedby a different driver, or a system mode being used in which thecalibration component may be halted. Other reasons may also exist forunavailability of the calibration component. In some examples, thedriver may be a driver of a data channel. In some examples, theparameter may be a configurable impedance of the driver of the datachannel. In some examples, a control signal may be received and used toindicate whether the calibration component may be available to adjustthe parameter of the driver.

At 410, if the memory device has determined that the calibrationcomponent is available—as determined at 405—the method may continue tomethod step 415. If the memory device has determined that thecalibration component is unavailable, the method may continue to methodstep 420.

At 415, the memory device may adjust, using the calibration component,the parameter of the driver to a first value. In some examples, thedriver parameter may be an impedance of the driver that may minimize animpedance mismatch with the channel.

At 420, the memory device may identify a temperature of the memorydevice. In some examples, a signal representing the temperature of thememory device may be received from a temperature sensor and may be usedto identify the temperature. In some examples, the signal may be acontrol signal.

At 425, the memory device may select a value of the parameter of thedriver based on the temperature of the memory device. In some examples,a trim setting may be selected from a plurality of trim settings basedon the temperature of the memory device. In some examples, each trimsetting may correspond to a different temperature. In some examples,each trim setting may correspond to a different range of temperatures.In some examples, the temperature of the memory device may be identifiedto be within a range of temperatures, and the parameter value may beselected based on the range of temperatures. In some examples, first andsecond parameter values may be identified corresponding to low and highendpoints of the range of temperatures, and the parameter value may beselected by performing an interpolation procedure based on thetemperature, the range of temperatures, and the first and secondparameter values. In some examples, the parameter value may be selectedfrom a quantity of values, such as, e.g., four, eight, 16, or otherquantities of parameter values.

At 430, the memory device may adjust the parameter of the driver to theselected value. In some examples, the configurable impedance of thedriver of a data channel may be adjusted by coupling the data channelwith a conductive line that corresponds to a selected trim setting. Insome examples, adjusting the configurable impedance of the driver maycause a termination impedance of the data channel to be at a configuredvalue.

At 435, the memory device may transmit a signal over the channel by thedriver operating using the adjusted value of the parameter. If thememory device determined that the calibration component was available atstep 405, the adjusted value of the parameter may be the first value. Ifthe memory device determined that the calibration component wasunavailable at step 405, the adjusted value of the parameter may be theselected value. In some examples, the parameter may be a configurableimpedance of the driver of a data channel that may minimize an impedancemismatch with the channel.

FIG. 5 shows a block diagram 500 of a memory device 505 that supportsadjusting parameters of channel drivers based on temperature inaccordance with examples as disclosed herein. The memory device 505 maybe an example of aspects of a memory device as described with referenceto FIGS. 3-4. The memory device 505 may include a temperature component510, a calibration component 515, a selection component 520, a couplingcomponent 525, an availability component 530, a transmission component535, and an adjustment component 540. Each of these modules maycommunicate, directly or indirectly, with one another (e.g., via one ormore buses).

The temperature component 510 may identify a temperature of a memorydevice. In some examples, the temperature component 510 may identify asecond temperature of the memory device that is different than thetemperature. In some examples, the temperature component 510 maycomprise a temperature sensor of the memory device. In some examples,the temperature sensor may generate a control signal that indicates thetemperature.

The calibration component 515 may when the calibration component isavailable: adjust, using the calibration component, the parameter of thedriver to a first value.

The selection component 520 may select a value of the parameter based onthe temperature and on identifying that the calibration component isunavailable. In some examples, the selection component 520 may when thecalibration component is unavailable: identify a temperature of thememory device and select a second value of the parameter based on thefirst value. In some examples, the selection component 520 may selectthe value from a set of trim settings that each corresponds to adifferent temperature or different range of temperatures. In someexamples, the selection component 520 may select a second value from aset of trim settings, the second value corresponding to the secondtemperature and being different than the value. In some examples, theselection component may receive a control signal that indicates thetemperature, where identifying the temperature is based on receiving thecontrol signal

In some examples, the selection component 520 may identify a range oftemperatures that includes the temperature, where identifying thetemperature is based on identifying the range of temperatures. In someexamples, the selection component 520 may identify a second value of theparameter, the second value being associated with an endpointtemperature of the range of temperatures. In some examples, theselection component 520 may identify a difference between thetemperature and the endpoint temperature of the range of temperatures.

In some examples, the selection component 520 may perform aninterpolation procedure using the difference, the endpoint temperature,and the second value, where selecting the value of the parameter isbased on performing the interpolation procedure. In some cases, thevalue of the parameter is selected from a set of trim settings that eachcorresponds to a different range of temperatures. In some cases, thevalue is selected from a quantity of values. In some cases, the value isselected from eight values.

The availability component 530 may identify that a calibration componentis unavailable to adjust a parameter of a driver of a data channel. Insome examples, the availability component 530 may identify whether acalibration component is available to adjust a parameter of a driver ofa memory device. In some examples, the availability component 530 mayreceive a control signal that indicates whether the calibrationcomponent is available to adjust the parameter of the driver, whereidentifying that the calibration component is unavailable to adjust theparameter of the driver is based on receiving the control signal.

The transmission component 535 may transmit, by the driver operatingusing the selected value of the parameter, a signal over the datachannel. In some examples, the transmission component 535 may transmit,by the driver operating using the first value or the second value of theparameter, a signal over a channel. In some examples, the transmissioncomponent 535 may transmit, by the driver operating using the secondvalue of the parameter, a second signal over the data channel. In somecases, the parameter includes a configurable impedance of the driver. Insome cases, the value of the parameter includes a numeric quantity ofthe configurable impedance of the driver.

The adjustment component 540 may adjust the parameter of the driver ofthe data channel to the selected value. In some examples, the adjustmentcomponent 540 may receive an indication of the selected value andconfigure the parameter of the driver based at least in part on theindication. In some examples, the adjustment component 540 may adjustthe parameter of the driver of the data channel to the value based oncoupling the data channel with a conductive line. In some examples, theadjustment component 540 may adjust the parameter of the driver of thedata channel to the second value based on coupling the data channel withthe second conductive line. In some examples, the adjustment component540 may adjust the configurable impedance of the driver causes atermination impedance of the data channel to be at a configured value.

The coupling component 525 may couple the data channel with a conductiveline that corresponds to the selected trim setting from the set of trimsettings, where adjusting the parameter of the driver is based oncoupling the data channel with the conductive line. In some examples,the coupling component 525 may couple the data channel with a secondconductive line that corresponds to the selected second value.

FIG. 6 shows a flowchart illustrating a method or methods 600 thatsupports adjusting parameters of channel drivers based on temperature inaccordance with examples as disclosed herein. The operations of method600 may be implemented by a memory device or its components as describedherein. For example, the operations of method 600 may be performed by amemory device as described with reference to FIG. 5. In some examples, amemory device may execute a set of instructions to control thefunctional elements of the memory device to perform the describedfunctions. Additionally or alternatively, a memory device may performaspects of the described functions using special-purpose hardware.

At 605, the memory device may identify a temperature of a memory device.The operations of 605 may be performed according to the methodsdescribed herein. In some examples, aspects of the operations of 605 maybe performed by a temperature component as described with reference toFIG. 5.

At 610, the memory device may identify that a calibration component isunavailable to adjust a parameter of a driver of a data channel. Theoperations of 610 may be performed according to the methods describedherein. In some examples, aspects of the operations of 610 may beperformed by an availability component as described with reference toFIG. 5.

At 615, the memory device may select a value of the parameter based onthe temperature and on identifying that the calibration component isunavailable. The operations of 615 may be performed according to themethods described herein. In some examples, aspects of the operations of615 may be performed by a selection component as described withreference to FIG. 5.

At 620, the memory device may adjust the parameter of the driver of thedata channel to the selected value. The operations of 620 may beperformed according to the methods described herein. In some examples,aspects of the operations of 620 may be performed by an adjustmentcomponent as described with reference to FIG. 5.

At 625, the memory device may transmit, by the driver operating usingthe selected value of the parameter, a signal over the data channel. Theoperations of 625 may be performed according to the methods describedherein. In some examples, aspects of the operations of 625 may beperformed by a transmission component as described with reference toFIG. 5.

In some examples, an apparatus as described herein may perform a methodor methods, such as the method 600. The apparatus may include features,means, or instructions (e.g., a non-transitory computer-readable mediumstoring instructions executable by a processor) for identifying atemperature of a memory device, identifying that a calibration componentis unavailable to adjust a parameter of a driver of a data channel,selecting a value of the parameter based on the temperature andidentifying that the calibration component is unavailable, adjusting theparameter of the driver of the data channel to the selected value, andtransmitting, by the driver operating using the selected value of theparameter, a signal over the data channel.

In some examples of the method 600 and the apparatus described herein,selecting the value may include operations, features, means, orinstructions for selecting the value from a set of trim settings thateach correspond to a different temperature or different range oftemperatures.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions forcoupling the data channel with a conductive line that corresponds to theselected trim setting from the set of trim settings, where adjusting theparameter of the driver may be based on coupling the data channel withthe conductive line.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions foridentifying a second temperature of the memory device, the secondtemperature different than the temperature, selecting a second valuefrom a set of trim settings, the second value corresponding to thesecond temperature and being different than the value, coupling the datachannel with a second conductive line that corresponds to the selectedsecond value, adjusting the parameter of the driver of the data channelto the second value based on coupling the data channel with the secondconductive line, and transmitting, by the driver operating using thesecond value of the parameter, a second signal over the data channel.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions forreceiving, from a temperature sensor of the memory device, a controlsignal that indicates the temperature, where identifying the temperaturemay be based on receiving the control signal.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions forreceiving a control signal that indicates whether the calibrationcomponent may be available to adjust the parameter of the driver, whereidentifying that the calibration component may be unavailable to adjustthe parameter of the driver may be based on receiving the controlsignal.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions foridentifying a range of temperatures that includes the temperature, whereidentifying the temperature may be based on identifying the range oftemperatures, identifying a second value of the parameter, the secondvalue being associated with an endpoint temperature of the range oftemperatures, identifying a difference between the temperature and theendpoint temperature of the range of temperatures, and performing aninterpolation procedure using the difference, the endpoint temperature,and the second value, where selecting the value of the parameter may bebased on performing the interpolation procedure.

In some examples of the method 600 and the apparatus described herein,the value of the parameter may be selected from a set of trim settingsthat each corresponds to a different range of temperatures.

In some examples of the method 600 and the apparatus described herein,the parameter may include a configurable impedance of the driver, andthe value of the parameter may include a numeric quantity of theconfigurable impedance of the driver. Some examples of the method 600and the apparatus described herein may further include operations,features, means, or instructions for adjusting the configurableimpedance of the driver that causes a termination impedance of the datachannel to be at a configured value.

In some examples of the method 600 and the apparatus described herein,the value may be selected from a quantity of values. In some examples ofthe method 600 and the apparatus described herein, the value may beselected from eight values.

FIG. 7 shows a flowchart illustrating a method 700 that supportsadjusting parameters of channel drivers based on temperature inaccordance with examples as disclosed herein. The operations of method700 may be implemented by a memory device or its components as describedherein. For example, the operations of method 700 may be performed by amemory device as described with reference to FIG. 5. In some examples, amemory device may execute a set of instructions to control thefunctional elements of the memory device to perform the describedfunctions. Additionally or alternatively, a memory device may performaspects of the described functions using special-purpose hardware.

At 705, the memory device may identify whether a calibration componentis available to adjust a parameter of a driver of a memory device. Theoperations of 705 may be performed according to the methods describedherein. In some examples, aspects of the operations of 705 may beperformed by an availability component as described with reference toFIG. 5.

At 710, the memory device may adjust, using the calibration componentwhen the calibration component is available, the parameter of the driverto a first value. The operations of 710 may be performed according tothe methods described herein. In some examples, aspects of theoperations of 710 may be performed by a calibration component asdescribed with reference to FIG. 5.

At 715, the memory device may identify, when the calibration componentis unavailable, a temperature of the memory device. The operations of715 may be performed according to the methods described herein. In someexamples, aspects of the operations of 715 may be performed by atemperature component as described with reference to FIG. 5.

At 720, the memory device may select, when the calibration component isunavailable, a second value of the parameter based on the first valuerepresenting the temperature and on identifying that the calibrationcomponent is unavailable. The operations of 720 may be performedaccording to the methods described herein. In some examples, aspects ofthe operations of 720 may be performed by a selection component asdescribed with reference to FIG. 5.

At 725, the memory device may transmit, by the driver operating usingthe first value or the second value of the parameter, a signal over achannel. The operations of 725 may be performed according to the methodsdescribed herein. In some examples, aspects of the operations of 725 maybe performed by a transmission component as described with reference toFIG. 5.

In some examples, an apparatus as described herein may perform a methodor methods, such as the method 700. The apparatus may include features,means, or instructions (e.g., a non-transitory computer-readable mediumstoring instructions executable by a processor) for: identifying whethera calibration component is available to adjust a parameter of a driverof a memory device; adjusting, using the calibration component when thecalibration component is available, the parameter of the driver to afirst value; identifying, when the calibration component is unavailable,a temperature of the memory device; selecting when the calibrationcomponent is unavailable, a second value of the parameter based on thefirst value representing the temperature and on identifying that thecalibration component is unavailable; and transmitting, by the driveroperating using the first value or the second value of the parameter, asignal over a channel.

It should be noted that the methods described herein are possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, portions from two or more of the methods may be combined.

An apparatus is described. The apparatus may include a driver of achannel of a memory device; a temperature component for determining atemperature of the memory device; a selection component coupled with thetemperature component and the driver, where the selection component isconfigured to receive an indication of the temperature from thetemperature component, receive an indication of availability of acalibration component to calibrate the driver, and select a value of aparameter of the driver based on the indication of the temperature andon identifying that the calibration component is unavailable, and wherethe driver is configured to transmit a signal over the channel using theselected value of the parameter.

Some examples of the apparatus may include an adjustment componentcoupled with the selection component and the driver, the adjustmentcomponent configured to receive an indication of the selected value ofthe parameter from the selection component and configure the parameterof the driver based on the selected value.

In some examples, the selection component may include operations,features, means, or instructions for a first multiplexer includinginputs coupled with a set of conductive lines that each correspond to adifferent value of the parameter and a selection input coupled with thetemperature component and configured to receive the indication of thetemperature.

In some examples, the selection component may include operations,features, means, or instructions for a second multiplexer including afirst input coupled with an output of the first multiplexer, a secondinput coupled with the calibration component, a selection inputconfigured to receive an indication of the availability of thecalibration component to calibrate the driver, and an output coupledwith the driver.

In some examples, the selection component may include operations,features, means, or instructions for an interpolator configured toselect the value of the parameter based on a range of temperatures thatincludes the temperature, a difference between an endpoint temperatureof the range of temperatures and the temperature, and a second value ofthe parameter associated with the endpoint temperature.

Some examples of the apparatus may include the calibration componentconfigured to calibrate the driver based on the temperature of thememory device. In some examples, the selection component may beconfigured to select the value from a set of values of the parameterstored by a memory component of the memory device. In some examples, thevalue may be a trim setting selected from a set of trim settings thateach correspond to a different range of temperatures of the memorydevice.

Some examples of the apparatus may include a set of conductive linescoupled to the selection component, each conductive line correspondingto a different value of the parameter, where the selection componentselects the value by selecting one of the set of conductive lines. Insome examples, the apparatus includes a memory die and the driver, thetemperature component, and the selection component may be coupled withthe memory die.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The terms “electronic communication,” “conductive contact,” “connected,”and “coupled” may refer to a relationship between components thatsupports the flow of signals between the components. Components areconsidered in electronic communication with (or in conductive contactwith or connected with or coupled with) one another if there is anyconductive path between the components that can, at any time, supportthe flow of signals between the components. At any given time, theconductive path between components that are in electronic communicationwith each other (or in conductive contact with or connected with orcoupled with) may be an open circuit or a closed circuit based on theoperation of the device that includes the connected components. Theconductive path between connected components may be a direct conductivepath between the components or the conductive path between connectedcomponents may be an indirect conductive path that may includeintermediate components, such as switches, transistors, or othercomponents. In some examples, the flow of signals between the connectedcomponents may be interrupted for a time, for example, using one or moreintermediate components such as switches or transistors.

The term “coupling” refers to condition of moving from an open-circuitrelationship between components in which signals are not presentlycapable of being communicated between the components over a conductivepath to a closed-circuit relationship between components in whichsignals can be communicated between components over the conductive path.When a component, such as a controller, couples other componentstogether, the component initiates a change that allows signals to flowbetween the other components over a conductive path that previously didnot permit signals to flow.

The term “isolated” refers to a relationship between components in whichsignals are not presently capable of flowing between the components.Components are isolated from each other if there is an open circuitbetween them. For example, two components separated by a switch that ispositioned between the components are isolated from each other when theswitch is open. When a controller isolates two components from oneanother, the controller affects a change that prevents signals fromflowing between the components using a conductive path that previouslypermitted signals to flow.

The devices discussed herein, including a memory array, may be formed ona semiconductor substrate, such as silicon, germanium, silicon-germaniumalloy, gallium arsenide, gallium nitride, etc. In some examples, thesubstrate is a semiconductor wafer. In other cases, the substrate may bea silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG)or silicon-on-sapphire (SOS), or epitaxial layers of semiconductormaterials on another substrate. The conductivity of the substrate, orsub-regions of the substrate, may be controlled through doping usingvarious chemical species including, but not limited to, phosphorous,boron, or arsenic. Doping may be performed during the initial formationor growth of the substrate, by ion-implantation, or by any other dopingmeans.

A switching component or a transistor discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic elements through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are electrons), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details toproviding an understanding of the described techniques. Thesetechniques, however, may be practiced without these specific details. Insome instances, well-known structures and devices are shown in blockdiagram form to avoid obscuring the concepts of the described examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If just the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof.

The various illustrative blocks and modules described in connection withthe disclosure herein may be implemented or performed with ageneral-purpose processor, a DSP, an ASIC, an FPGA or other programmablelogic device, discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein. A general-purpose processor may be a microprocessor,but in the alternative, the processor may be any processor, controller,microcontroller, or state machine. A processor may also be implementedas a combination of computing devices (e.g., a combination of a DSP anda microprocessor, multiple microprocessors, one or more microprocessorsin conjunction with a DSP core, or any other such configuration).

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described above can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations. Also, as used herein, including in the claims, “or” as usedin a list of items (for example, a list of items prefaced by a phrasesuch as “at least one of” or “one or more of”) indicates an inclusivelist such that, for example, a list of at least one of A, B, or C meansA or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, asused herein, the phrase “based on” shall not be construed as a referenceto a closed set of conditions. For example, an exemplary step that isdescribed as “based on condition A” may be based on both a condition Aand a condition B without departing from the scope of the presentdisclosure. In other words, as used herein, the phrase “based on” shallbe construed in the same manner as the phrase “based at least in parton.”

Computer-readable media includes both non-transitory computer storagemedia and communication media including any medium that facilitatestransfer of a computer program from one place to another. Anon-transitory storage medium may be any available medium that can beaccessed by a general purpose or special purpose computer. By way ofexample, and not limitation, non-transitory computer-readable media cancomprise RAM, ROM, electrically erasable programmable read-only memory(EEPROM), compact disk (CD) ROM or other optical disk storage, magneticdisk storage or other magnetic storage devices, or any othernon-transitory medium that can be used to carry or store desired programcode means in the form of instructions or data structures and that canbe accessed by a general-purpose or special-purpose computer, or ageneral-purpose or special-purpose processor. Also, any connection isproperly termed a computer-readable medium. For example, if the softwareis transmitted from a website, server, or other remote source using acoaxial cable, fiber optic cable, twisted pair, digital subscriber line(DSL), or wireless technologies such as infrared, radio, and microwave,then the coaxial cable, fiber optic cable, twisted pair, digitalsubscriber line (DSL), or wireless technologies such as infrared, radio,and microwave are included in the definition of medium. Disk and disc,as used herein, include CD, laser disc, optical disc, digital versatiledisc (DVD), floppy disk and Blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above are also included within the scope ofcomputer-readable media.

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be apparent to those skilled in the art, and the generic principlesdefined herein may be applied to other variations without departing fromthe scope of the disclosure. Thus, the disclosure is not limited to theexamples and designs described herein but is to be accorded the broadestscope consistent with the principles and novel features disclosedherein.

What is claimed is:
 1. A method, comprising: identifying a temperatureof a memory device; receiving an indication of availability of acalibration component to calibrate a driver of a data channel;identifying that the calibration component is unavailable to adjust aparameter of the driver of the data channel based at least in part onthe indication; selecting a value of the parameter based at least inpart on the temperature and based at least in part on identifying thatthe calibration component is unavailable; adjusting the parameter of thedriver of the data channel to the selected value; and transmitting, bythe driver operating using the selected value of the parameter, a signalover the data channel.
 2. The method of claim 1, wherein selecting thevalue comprises: selecting the value from a plurality of trim settingsthat each correspond to a different temperature or different range oftemperatures.
 3. The method of claim 2, further comprising: coupling thedata channel with a conductive line that corresponds to the selectedvalue from the plurality of trim settings, wherein adjusting theparameter of the driver is based at least in part on coupling the datachannel with the conductive line.
 4. The method of claim 1, furthercomprising: receiving, from a temperature sensor of the memory device, acontrol signal that indicates the temperature, wherein identifying thetemperature is based at least in part on receiving the control signal.5. The method of claim 1, wherein the value of the parameter is selectedfrom a plurality of trim settings that each corresponds to a differentrange of temperatures.
 6. The method of claim 1, wherein: the parametercomprises a configurable impedance of the driver; and the value of theparameter comprises a numeric quantity of the configurable impedance ofthe driver.
 7. The method of claim 6, wherein adjusting the configurableimpedance of the driver causes a termination impedance of the datachannel to be at a configured value.
 8. The method of claim 1, whereinthe value is selected from a quantity of values.
 9. The method of claim8, wherein the value is selected from eight values.
 10. A method,comprising: identifying a temperature of a memory device; identifyingthat a calibration component is unavailable to adjust a parameter of adriver of a data channel; selecting a value of the parameter based atleast in part on the temperature and based at least in part onidentifying that the calibration component is unavailable; adjusting theparameter of the driver of the data channel to the selected value;transmitting, by the driver operating using the selected value of theparameter, a signal over the data channel; identifying a secondtemperature of the memory device, the second temperature different thanthe temperature; selecting a second value from a plurality of trimsettings, the second value corresponding to the second temperature andbeing different than the value; coupling the data channel with a secondconductive line that corresponds to the selected second value; adjustingthe parameter of the driver of the data channel to the second valuebased at least in part on coupling the data channel with the secondconductive line; and transmitting, by the driver operating using thesecond value of the parameter, a second signal over the data channel.11. A method comprising: identifying a temperature of a memory device;identifying a range of temperatures that includes the temperature,wherein identifying the temperature is based at least in part onidentifying the range of temperatures; identifying that a calibrationcomponent is unavailable to adjust a parameter of a driver of a datachannel; identifying a second value of the parameter, the second valuebeing associated with an endpoint temperature of the range oftemperatures; identifying a difference between the temperature and theendpoint temperature of the range of temperatures; and performing aninterpolation procedure using the difference, the endpoint temperature,and the second value; selecting a value of the parameter based at leastin part on the temperature and based at least in part on identifyingthat the calibration component is unavailable, wherein selecting thevalue of the parameter is based at least in part on performing theinterpolation procedure; adjusting the parameter of the driver of thedata channel to the selected value; and transmitting, by the driveroperating using the selected value of the parameter, a signal over thedata channel.
 12. An apparatus, comprising: a driver of a channel of amemory device; a temperature component for determining a temperature ofthe memory device; and a selection component coupled with thetemperature component and the driver, wherein the selection component isconfigured to: receive an indication of the temperature from thetemperature component; receive an indication of availability of acalibration component to calibrate the driver; and select a value of aparameter of the driver based at least in part on the indication of thetemperature and based at least in part on identifying that thecalibration component is unavailable, wherein the driver is configuredto transmit a signal over the channel using the selected value of theparameter.
 13. The apparatus of claim 12, further comprising: anadjustment component coupled with the selection component and thedriver, the adjustment component configured to receive an indication ofthe selected value of the parameter from the selection component andconfigure the parameter of the driver based at least in part on theselected value.
 14. The apparatus of claim 12, wherein the selectioncomponent comprises: a first multiplexer including inputs coupled with aplurality of conductive lines that each correspond to a different valueof the parameter and a selection input coupled with the temperaturecomponent and configured to receive the indication of the temperature.15. The apparatus of claim 14, wherein the selection componentcomprises: a second multiplexer including a first input coupled with anoutput of the first multiplexer, a second input coupled with thecalibration component, a selection input configured to receive theindication of availability of the calibration component to calibrate thedriver, and an output coupled with the driver.
 16. The apparatus ofclaim 12, wherein the selection component comprises: an interpolatorconfigured to select the value of the parameter based at least in parton a range of temperatures that includes the temperature, a differencebetween an endpoint temperature of the range of temperatures and thetemperature, and a second value of the parameter associated with theendpoint temperature.
 17. The apparatus of claim 12, further comprising:the calibration component configured to calibrate the driver based atleast in part on the temperature of the memory device.
 18. The apparatusof claim 12, wherein the selection component is configured to select thevalue from a plurality of values of the parameter stored by a memorycomponent of the memory device.
 19. The apparatus of claim 18, whereinthe value is a trim setting selected from a plurality of trim settingsthat each correspond to a different range of temperatures of the memorydevice.
 20. The apparatus of claim 12, further comprising: a pluralityof conductive lines coupled to the selection component, each conductiveline corresponding to a different value of the parameter, wherein theselection component selects the value by selecting one of the pluralityof conductive lines.
 21. The apparatus of claim 12, wherein theapparatus comprises a memory die, and wherein the driver, thetemperature component, and the selection component are coupled with thememory die.
 22. A method, comprising: identifying that a calibrationcomponent is available to adjust a parameter of a driver of a memorydevice; adjusting, using the calibration component and based at least inpart on determining that the calibration component is available, theparameter of the driver to a first value; identifying, when thecalibration component is unavailable, a temperature of the memorydevice; selecting, based at least in part on the calibration componentbeing unavailable, a second value for the parameter that corresponds tothe temperature of the memory device; and transmitting, by the driveroperating using the second value of the parameter, a signal over achannel.